David Adolph
Doktor vid
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik
Visar 11 publikationer
2018
Vertical Electrical Conductivity of ZnO/GaN Multilayers for Application in Distributed Bragg Reflectors
Filip Hjort, Seyed Ehsan Hashemi, David Adolph et al
IEEE Journal of Quantum Electronics. Vol. 54 (4)
Artikel i vetenskaplig tidskrift
2018
Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers
Johan Bergsten, Mattias Thorsell, David Adolph et al
IEEE Transactions on Electron Devices. Vol. 65 (6), p. 2446-2453
Artikel i vetenskaplig tidskrift
2017
Effect of compositional interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors grown on SiC''
Seyed Ehsan Hashemi, Filip Hjort, Martin Stattin et al
Applied Physics Express. Vol. 10 (5), p. 055501-
Artikel i vetenskaplig tidskrift
2017
Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy
Filip Hjort, Seyed Ehsan Hashemi, David Adolph et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 10104, p. 1010413-1
Paper i proceeding
2017
Nanoscale structuring to improve laser performance
Åsa Haglund, Seyed Ehsan Hashemi, Filip Hjort et al
Paper i proceeding
2016
Impact of O2 flow rate on the growth rate of ZnO(0001) and ZnO(000-1) on GaN by plasma-assisted molecular beam epitaxy
David Adolph, Tommy Ive
Physica Status Solidi (B): Basic Research. Vol. 253 (8), p. 1523-1528
Artikel i vetenskaplig tidskrift
2016
Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy
David Adolph, Reza R. Zamani, Kimberly A. Dick et al
APL Materials. Vol. 4 (8), p. 086106-
Artikel i vetenskaplig tidskrift
2016
Growth of ZnO/GaN distributed Bragg reflectors by plasma-assisted molecular beam epitaxy
David Adolph
Doktorsavhandling
2015
Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers
David Adolph, Tobias Tingberg, Thorvald Andersson et al
Frontiers of Materials Science. Vol. 9 (2), p. 185-191
Artikel i vetenskaplig tidskrift
2015
Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy
David Adolph, Tobias Tingberg, Tommy Ive
Journal of Crystal Growth. Vol. 426, p. 129-134
Artikel i vetenskaplig tidskrift
2014
Nucleation and epitaxial growth of ZnO on GaN(0 0 0 1)
David Adolph, Tommy Ive
Applied Surface Science. Vol. 307, p. 438-443
Artikel i vetenskaplig tidskrift
Det finns inga projekt att visa.
Det kan finnas fler projekt där David Adolph medverkar, men du måste vara inloggad som anställd på Chalmers för att kunna se dem.