Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC
Artikel i vetenskaplig tidskrift, 2016
Chemical vapor deposition has proved to be successful in producing graphene samples on silicon carbide (SiC) homogeneous at the centimeter scale in terms of Hall conductance quantization. Here, we report on the realization of co-planar diffusive Al/ monolayer graphene/ Al junctions on the same graphene sheet, with separations between the electrodes down to 200 nm. Robust Josephson coupling has been measured for separations not larger than 300 nm. Transport properties are reproducible on different junctions and indicate that graphene on SiC substrates is a concrete candidate to provide scalability of hybrid Josephson graphene/superconductor devices.
Josephson effect
Silicon carbide
Graphene
Författare
B. Jouault
Laboratoire Charles Coulomb
Sophie Charpentier
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
D. Massarotti
Superconductors, oxides and other innovative materials and devices
Università degli Studi della Campania Luigi Vanvitelli
A. Michon
CRHEA Centre de Recherche sur l'Hetero-Epitaxie et ses Applications
M. Paillet
Laboratoire Charles Coulomb
J. R. Huntzinger
Laboratoire Charles Coulomb
A. Tiberj
Laboratoire Charles Coulomb
A. A. Zahab
Laboratoire Charles Coulomb
Thilo Bauch
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
P. Lucignano
Superconductors, oxides and other innovative materials and devices
A. Tagliacozzo
Superconductors, oxides and other innovative materials and devices
Universita degli Studi di Napoli Federico II
Istituto Nazionale di Fisica Nucleare
Floriana Lombardi
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
F. Tafuri
Superconductors, oxides and other innovative materials and devices
Università degli Studi della Campania Luigi Vanvitelli
Journal of Superconductivity and Novel Magnetism
1557-1939 (ISSN) 1557-1947 (eISSN)
Vol. 29 5 1145-1150Styrkeområden
Nanovetenskap och nanoteknik
Ämneskategorier (SSIF 2011)
Nanoteknik
Den kondenserade materiens fysik
DOI
10.1007/s10948-016-3487-1