Controlling In-Ga-Zn-O thin films transport properties through density changes
Artikel i vetenskaplig tidskrift, 2016

In the following study we investigate the effect of the magnetron cathode current (I-c) during reactive sputtering of In-Ga-Zn-O (a-IGZO) on thin-films nanostructure and transport properties. All fabricated films are amorphous, according to X-ray diffraction measurements. However, High Resolution Transmission Electron Microscopy revealed the a-IGZO fabricated at I-C = 70 mA to contain randomly-oriented nanocrystals dispersed in amorphous matrix, which disappear in films deposited at higher cathode current. These nanocrystals have the same composition as the amorphous matrix. One can observe that, while I-C is increased from 70 to 150 mA, the carrier mobility improves from mu(Hall) = 6.9 cm(2)/Vs to mu(Hall) = 9.1 cm(2)/Vs. Additionally, the increase of I-C caused a reduction of the depletion region trap states density of the Ru-Si-O/In-Ga-Zn-O Schottky barrier. This enhancement in transport properties is attributed to the greater overlapping of s-orbitals of the film-forming cations caused by increased density, evidenced by X-ray reflectivity, at a fixed chemical composition, regardless nanostructure of thin films. (C) 2016 Elsevier B.V. All rights reserved.


Schottky contacts

Atom Probe Tomography


Amorphous oxide semiconductors


J. Kaczmarski

Instytut Technologii Elektronowej

Torben Boll

Chalmers, Fysik, Biologisk fysik

M. A. Borysiewicz

Instytut Technologii Elektronowej

A. Taube

Instytut Technologii Elektronowej

Politechnika Warszawska

Mattias Thuvander

Chalmers, Fysik, Biologisk fysik

Jiayan Law

Chalmers, Fysik, Biologisk fysik

E. Kaminska

Instytut Technologii Elektronowej

Krystyna Marta Stiller

Chalmers, Fysik, Biologisk fysik

Thin Solid Films

0040-6090 (ISSN)

Vol. 608 57-61