Anomalous photoluminescence in InP1-xBix
Artikel i vetenskaplig tidskrift, 2016

Low temperature photoluminescence (PL) from InP1-xBix thin films with Bi concentrations in the 0-2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 ?m in optical coherent tomography (OCT).

Författare

Xiaoyan Wu

Chinese Academy of Sciences

X Chen

Chinese Academy of Sciences

Wenwu Pan

Chinese Academy of Sciences

Peng Wang

Chinese Academy of Sciences

Liyao Zhang

Chinese Academy of Sciences

Yaoyao Li

Chinese Academy of Sciences

Hailong Wang

Qufu Normal University

Kai Wang

Chinese Academy of Sciences

Jun Shao

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Scientific Reports

2045-2322 (ISSN)

Vol. 6 Art. no. 27867- 27867

Ämneskategorier

Fysik

DOI

10.1038/srep27867