A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics
Artikel i vetenskaplig tidskrift, 2017

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

doping

organic thermoelectrics

polymer semiconductor

ternary blend

Författare

David Kiefer

Chalmers, Kemi och kemiteknik, Tillämpad kemi, Polymerteknologi

Liyang Yu

Chalmers, Kemi och kemiteknik, Tillämpad kemi, Polymerteknologi

Erik Fransson

Chalmers, Fysik, Material- och ytteori

A. Gomez

Universitat Autonoma de Barcelona (UAB)

Daniel Priemetzhofer

Uppsala universitet

A. Amassian

King Abdullah University of Science and Technology (KAUST)

M. Campoy-Quiles

Universitat Autonoma de Barcelona (UAB)

Christian Müller

Chalmers, Kemi och kemiteknik, Tillämpad kemi, Polymerteknologi

Advanced Science

2198-3844 (ISSN)

Vol. 4 1 1600203- 1600203

Ämneskategorier

Polymerteknologi

Styrkeområden

Materialvetenskap

DOI

10.1002/advs.201600203