A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics
Artikel i vetenskaplig tidskrift, 2017

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

organic thermoelectrics

ternary blend

polymer semiconductor



David Kiefer

Chalmers, Kemi och kemiteknik, Tillämpad kemi

Liyang Yu

Chalmers, Kemi och kemiteknik, Tillämpad kemi

Erik Fransson

Chalmers, Fysik, Material- och ytteori

A. Gomez

Universitat Autonoma de Barcelona (UAB)

Daniel Priemetzhofer

Uppsala universitet

A. Amassian

King Abdullah University of Science and Technology (KAUST)

M. Campoy-Quiles

Universitat Autonoma de Barcelona (UAB)

Christian Müller

Chalmers, Kemi och kemiteknik, Tillämpad kemi

Advanced Science

2198-3844 (ISSN) 21983844 (eISSN)

Vol. 4 1 1600203- 1600203



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