A content-addressable memory cell with MNOS transistors
Artikel i vetenskaplig tidskrift, 1973

Describes a new associative memory cell in which MNOS transistors are used as storage elements. The memory can perform functions as a read-only memory and at the same time as a read-write memory. The cell can be read as a random-access memory or as a content-addressable memory. As a CAM certain bits can be masked out, i.e., not compared with the stored bits. The comparison can also be controlled from the memory by the stored words. Since the word length or combinations of normal words can be stored in one word of the memory, fewer memory cells are needed than in an ordinary memory. Searches for groups of words (prime implicands) can be performed. Memory cells with an area of 5000-m- have been built to demonstrate the feasibility of the MNOS-CAM.

Writing

Circuits

Associative memory

Read-write memory

MOSFETs

Random access memory

Area measurement

Read only memory

CADCAM

Computer aided manufacturing

Författare

Kjell Jeppson

Institutionen för mikroelektronik och nanovetenskap

Institutionen för elektronfysik III - Fasta tillståndets elektronfysik

Göran Peterson

Institutionen för elektronfysik III - Fasta tillståndets elektronfysik

Gunnar Carlstedt

Institutionen för elektronfysik III - Fasta tillståndets elektronfysik

IEEE Journal of Solid-State Circuits

0018-9200 (ISSN)

Vol. 8 5 338 - 343

Ämneskategorier

Elektroteknik och elektronik