An efficient parameter extraction algorithm for MOS transistor models
Artikel i vetenskaplig tidskrift, 1992

A general, direct parameter extraction algorithm that uses a small number of data points has been developed for MOS transistor models. This extraction algorithm has been tested using two transistor models in SPICE, MOS3, and BSIM. The basic idea of the algorithm is to use only one data point for each transistor parameter. Appropriate selection of the data points ensures physically reasonable values of most extracted parameters. Analytical expressions or rapidly converging numerical equations are used to calculate the parameters. Interaction between different parameters are taken into account. Good agreement between measured and simulated data is obtained from only 15 and 25 data points for MOS3 and BSIM, respectively. The total extraction time for a single transistor is around 40 s for MOS3 and 1 min for BSIM.

Integrated circuit modeling

Threshold voltage

Parameter extraction

Circuit simulation



Semiconductor device modeling

Production control

Data mining



Peter R. Karlsson

Institutionen för fasta tillståndets elektronik

Kjell Jeppson

Institutionen för fasta tillståndets elektronik

Institutionen för mikroelektronik och nanovetenskap

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 39 9 2070 - 2076


Elektroteknik och elektronik

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