A direct extraction algorithm for a submicron MOS transistor model
Paper i proceeding, 1993
A four-point technique for direct extraction of the linear region model parameters of submicron transistors is presented. The choice of data points for minimizing sensitivity to measurement noise is discussed. For a submicron transistor model where a second order mobility reduction factor is included to model the quadratic gate voltage dependence, direct extraction of the four linear-region parameters is possible using only four data points. This means that efficient parameter extraction is facilitated and that this type of submicron transistor model can be used in production control.
Transistors
Noise measurement
Geometry
Solid state circuits
Sensitivity analysis
Circuit noise
Solid modeling
Threshold voltage
Data mining
MOSFETs
Författare
Peter R. Karlsson
Institutionen för fasta tillståndets elektronik
Kjell Jeppson
Institutionen för mikroelektronik och nanovetenskap
Institutionen för fasta tillståndets elektronik
Proceedings of the International Conference on Microelectronic Test Structures ICMTS
Vol. 1993 22-25 March 1993
0-7803-0857-3 (ISBN)
Ämneskategorier
Elektroteknik och elektronik