A direct extraction algorithm for a submicron MOS transistor model
Paper i proceeding, 1993

A four-point technique for direct extraction of the linear region model parameters of submicron transistors is presented. The choice of data points for minimizing sensitivity to measurement noise is discussed. For a submicron transistor model where a second order mobility reduction factor is included to model the quadratic gate voltage dependence, direct extraction of the four linear-region parameters is possible using only four data points. This means that efficient parameter extraction is facilitated and that this type of submicron transistor model can be used in production control.

Solid state circuits

Transistors

Threshold voltage

MOSFETs

Data mining

Circuit noise

Solid modeling

Noise measurement

Sensitivity analysis

Geometry

Författare

Peter R. Karlsson

Institutionen för fasta tillståndets elektronik

Kjell Jeppson

Institutionen för mikroelektronik och nanovetenskap

Institutionen för fasta tillståndets elektronik

Proceedings of the International Conference on Microelectronic Test Structures ICMTS

Vol. 1993 22-25 March 1993

Ämneskategorier

Elektroteknik och elektronik

ISBN

0-7803-0857-3