Single Event Upset Behavior of CMOS Static RAM Cells
Artikel i övriga tidskrifter, 1993

An improved state-space analysis of the CMOS static RAM cell is presented. Introducing the concept of the dividing line, the critical charge for heavy-ion-induced upset of memory cells can be calculated considering symmetrical as well as asymmetrical capacitive loads. From the critical charge, the upset-rate per bit-day for static RAMs can be estimated.

Författare

Kjell Jeppson

Institutionen för fasta tillståndets elektronik

Udo Lieneweg

Martin G. Buehler

JPL Technical Report Server

Vol. 1993

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Elektroteknik och elektronik

Annan elektroteknik och elektronik

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2017-10-08