Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD
Artikel i vetenskaplig tidskrift, 2006
Författare
[Person e1624678-aab7-4094-84d6-92b3ff82e498 not found]
[Person f1a2cd72-6345-40e2-bcb3-52355429bd42 not found]
[Person a090a74a-8713-4b8f-a88b-0791fe9abec9 not found]
[Person 8ba7bf0a-8a2e-488c-957f-b5c025d54978 not found]
[Person b992ae1d-c085-46a3-9b58-d7fc11c7a816 not found]
[Person 1d1ae5a4-03dc-4377-ba56-2d43ecf6e623 not found]
[Person 19ce168a-5156-497d-98b1-fc67d9e21a88 not found]
[Person 06f51cf0-cc15-42f6-b1b9-303e96ab8aa4 not found]
[Person ee6c1c7c-4a22-494d-b363-457c26b1680f not found]
[Person b840e2f4-b6a3-41f0-9322-ffc65df3f2c7 not found]
Physica Status Solidi C
Vol. 6 2231-6
Ämneskategorier (SSIF 2011)
Annan materialteknik