Thermal noise-limited sensitivity of FET-based terahertz detectors
Paper i proceeding, 2017

Here we present a detailed study on estimation of noise-dependent parameters, such as signal-to-noise ratio (SNR) or noise equivalent power (NEP), of field-effect-transistor based terahertz detectors (TeraFETs). Commonly, these parameters are estimated from a well-known assumption, that detector's performance is limited by the thermal noise of transistor's channel. However, practice shows that the influence of other noise sources or transient effects is considerable. We summarize TeraFET noise measurements performed on different material systems based transistors, such as AlGaN/GaN, AlGaAs/GaAs, silicon CMOS, and monolayer graphene. We have achieved a good agreement between thermal noise and measured data. However, attention has to be paid to gate leakage currents and slow defect charging and discharging effects, which can strongly influence TeraFET's performance estimation.


D. Cibiraite

Organisation okänd

M Bauer

Organisation okänd

A. Lisauskas

Organisation okänd

V. Krozer

Organisation okänd

H. G. Roskos

Organisation okänd

A. Rämer

Organisation okänd

W. Heinrich

Organisation okänd

S. Pralgauskaite

Organisation okänd

J. Zdanevicius

Organisation okänd

J. Matukas

Organisation okänd


Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

2017 International Conference on Noise and Fluctuations, ICNF 2017, Vilnius, Lithuania, 20-23 June 2017


International Conference on Noise and Fluctuations (ICNF)
Vilnius, Lithuania,


Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik




Annan elektroteknik och elektronik



Mer information

Senast uppdaterat