Design and evaluation of 20-GHz power amplifiers in 130-nm CMOS
Artikel i vetenskaplig tidskrift, 2009

The use of 130-nm CMOS for power amplifiers at 20GHz is explored through a set of power amplifiers as well as transistor level measurements. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, and the combination of two amplifiers using power splitters/combiners. A maximum output power of 63mW at 20GHz was achieved. Transistor-level characterization using load pull measurements on 1-mm gate width transistors yielded 148-mW/mm output power. Transistor modeling and layout for power amplifiers are also discussed. An estimate on the maximum achievable output at 20GHz from 130-nm CMOS power amplifiers, based on findings in this paper and the literature, is finally presented.




Power amplifier



Mattias Ferndahl

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Ted Johansson

Infineon Technologies Nordic AB, Sweden

Huawei Technologies Sweden

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

International Journal of Microwave and Wireless Technologies

1759-0787 (ISSN)

Vol. 1 4 301-307


Elektroteknik och elektronik