Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy
Artikel i vetenskaplig tidskrift, 2017

We show the potential of cross-sectional scanning tunneling microscopy to address structural properties of dilute III-V bismides by investigating Bi: InP. Bismuth atoms down to the second monolayer below the {110} InP surfaces, which give rise to three classes of distinct contrast, are identified with the help of density functional theory calculations. Based on this classification, the pair-correlation function is used to quantify the ordering of Bi atoms on the long range. In a complementary short-ranged study, we investigate the Bi ordering at the atomic level. An enhanced tendency for the formation of first-nearest-neighbor Bi pairs is found. In addition, the formation of small Bi clusters is observed whose geometries appear to be related to strong first-nearest-neighbor Bi pairing. We also identify growth related crystal defects, such as In vacancies, P antisites, and Bi antisites.

1988

gap

iii-v semiconductors

gaas

v6

journal of vacuum science & technology a-vacuum surfaces and films

spectroscopy

molecular-beam epitaxy

en cj

arsenic antisite defects

110 surfaces

gaas1-xbix

growth

bulk

Författare

C. M. Krammel

M. Roy

J. Tilley

P. A. Maksym

L. Y. Zhang

P. Wang

K. Wang

Y. Li

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

P. M. Koenraad

Physical Review Materials

2475-9953 (ISSN)

Vol. 1 3 Article Number: 034606 -

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DOI

10.1103/PhysRevMaterials.1.034606