Fabrication process and 110 GHz measurement result of MS-to-CPW RF-via transition for RF-MEMS devices packaging applications
Paper i proceeding, 2009

This paper presents the fabrication process of RF-via (0-level) and flip-chip bump (1-level) transitions for applications of packaging MS (microstrip) RF-MEMS devices. The interconnect structure with MS-to-CPW transition between GaAs MEMS substrate and Al2O3 motherboard was in-house fabricated. A novel fabrication process for RF-MEMS packaging is in detail. After fabrication, the samples were measured up to 110 GHz using on-wafer probing measurement. From the measured results, the insertion loss of entire interconnect structure is better than -2 dB up to 100 GHz, documenting the feasibility for millimeter-wave RF-MEMS devices packaging applications.

Fabrication

Packaging

Microelectromechanical device

Microstrip

Millimeter-wave

Författare

Li-Han Hsu

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Wei-Cheng Wu

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

E. Y. Chang

National Chiao Tung University Taiwan

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Y. C. Wu

National Chiao Tung University Taiwan

C. T. Wang

National Chiao Tung University Taiwan

S. P. Tsai

National Chiao Tung University Taiwan

2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Ämneskategorier

Elektroteknik och elektronik

ISBN

978-189358013-8