Analysis of quasi-static assumption in nonlinear finFET model
Paper i proceeding, 2008

The construction and validation of a quasi-static nonlinear microwave model for FinFETs are investigated. A very good agreement between model simulations and measurements is obtained under different DC bias points, input power levels, fundamental frequencies up to 5 GHz, and device geometries. Since the intrinsic part of the FET model is based on the quasi-static approximation, the goal of this work is to analyze in detail the limitations of this assumption by examining the intrinsic admittance parameters versus the frequency.


G. Crupi

Universita degli Studi di Messina

A. Caddemi

Universita degli Studi di Messina

D. Schreurs

KU Leuven

M. Homayouni

KU Leuven

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

B. Parvais

Interuniversity Micro-Electronics Center at Leuven

2008 17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008



Elektroteknik och elektronik