A 100–140 GHz SiGe-BiCMOS sub-harmonic down-converter mixer
Paper i proceeding, 2017

This paper demonstrates a wideband, subharmonic down converting mixer using a commercial 130-nm SiGe-BiCMOS technology. The mixer adopts a frequency doubling LO-stage, a differential switched-transconductance RF-stage, on-chip LO and RF baluns, and two emitter-follower buffer-stages. The measured results exhibit a maximum conversion gain up to 2.6 dB over the frequency range of 100 to 140 GHz with a LO power of 5 dBm. The mixer achieves an input referred 1-dB compression point of −7.2 dBm, with a DC power of 46.3 mW, including 26.7 mW for buffer-stages. It demonstrates also up to 12 GHz 3-dB IF bandwidth, which to the authors' best knowledge, is the highest obtained among active sub-harmonic mixers operating above 100 GHz. The chip occupies 0.4 mm2, including pads.

above 100 GHz

SiGe MMICs

broadband circuits

down-converter

sub-harmonic mixer (SHM)

millimeter-wave

Författare

Neda Seyedhosseinzadeh

Abdolreza navabi

Sona Carpenter

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mingquang Bao

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2017 12th European Microwave Integrated Circuits Conference (EuMIC),

Ämneskategorier

Telekommunikation

Kommunikationssystem

Elektroteknik och elektronik

Annan elektroteknik och elektronik

ISBN

978-2-87487-048-4