Ferroelectric thin films: Review of materials, properties, and applications
Artikel i vetenskaplig tidskrift, 2006

An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems' applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure (domains, in particular), and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems' applications, and permittivity and loss in ferroelectric films-important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures. (c) 2006 American Institute of Physics.

Författare

Nava Setter

Ecole Polytechnique Federale de Lausanne (EPFL)

D. Damjanovic

Ecole Polytechnique Federale de Lausanne (EPFL)

L. Eng

Technische Universität Dresden

G. Fox

Ramtron International Corporation

Spartak Gevorgian

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågs- och terahertzteknologi

S. Hong

Samsung

A. Kingon

North Carolina State University

H. Kohlstedt

Forschungszentrum Jülich

University of California

N. Y. Park

Samsung

G. B. Stephenson

Argonne National Laboratory

I. Stolitchnov

Ecole Polytechnique Federale de Lausanne (EPFL)

A. K. Taganstev

Ecole Polytechnique Federale de Lausanne (EPFL)

D. V. Taylor

Nanosys, Inc.

Ecole Polytechnique Federale de Lausanne (EPFL)

T. Yamada

Ecole Polytechnique Federale de Lausanne (EPFL)

S. Streiffer

Argonne National Laboratory

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 100 5 051606-1-46- 051606

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1063/1.2336999

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Senast uppdaterat

2022-04-05