Large thermoelectric figure of merit at high temperature in Czochralski-grown clathrate Ba8Ga16Ge30
Artikel i vetenskaplig tidskrift, 2006

The Czochralski method was used to grow a 46-mm -long crystal of the Ba8 Ga16 Ge30 clathrate, which was cut into disks that were evaluated for thermoelectric performance. The Seebeck coefficient and electrical and thermal conductivities all showed evidence of a transition from extrinsic to intrinsic behavior in the range of 600-900 K. The corresponding figure of merit (ZT) was found to be a record high of 1.35 at 900 K and with an extrapolated maximum of 1.63 at 1100 K. This makes the Ba8 Ga16 Ge30 clathrate an exceptionally strong candidate for medium and high-temperature thermoelectric applications.

THERMAL-CONDUCTIVITY SR8GA16GE30 BA8GA16SI30 BA8IN16SN30 SR BA GE

Författare

Ali Saramat

Chalmers, Kemi- och bioteknik, Teknisk ytkemi

G. Svensson

Chalmers

Anders Palmqvist

Chalmers, Kemi- och bioteknik

C. Stiewe

Deutsches Zentrums für Luft- und Raumfahrt (DLR)

E. Mueller

Deutsches Zentrums für Luft- und Raumfahrt (DLR)

D. Platzek

Deutsches Zentrums für Luft- und Raumfahrt (DLR)

S.G.K. Williams

Cardiff University

D.M. Rowe

Cardiff University

J.D. Bryan

University of California

G.D. Stucky

University of California

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 99 2 023708 -

Ämneskategorier

Annan materialteknik

DOI

10.1063/1.2163979

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Senast uppdaterat

2018-09-10