Piece-wise modelling - bringing the essentials of MOSFET modelling to a new student generation
Paper i proceeding, 2006
A simple MOSFET model is presented in this paper. The model focuses on simple concepts that stresses dualities (or opposites) like ON or OFF, linear or saturated operation, strong inversion or subthreshold leakage, etc. The model treats velocity saturation as a first-order effect and leads naturally to industry standard BSIM models, but still retains a close resemblance to classical "square-law" models. Despite its simplicity the model shows a good fit to experimental data (in this case exemplified by Intel 60 nm trigate transistor data).
Författare
Kjell Jeppson
Chalmers, Mikroteknologi och nanovetenskap, Fasta tillståndets elektronik
24th Norchip Conference, 2006; Linkoping; Sweden; 20 November 2006 through 21 November 2006
99-102
978-142440772-9 (ISBN)
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/NORCHP.2006.329253
ISBN
978-142440772-9