Study of A1/Nb interface by spectroscopy of reflected electrons
Artikel i vetenskaplig tidskrift, 2007

We have studied Al/Nb interface with help of spectroscopy of reflected electrons. Ion sputtering combined with monitoring of Auger peaks has been used to approach the interface. The developed method of quantitative interpretation of spectra allowed us to characterize the distribution of Al and Nb in the interface region with a nanometer depth resolution. The Al/Nb interface was found to have an intermediate layer of about 10 nm thickness, which is more likely due to the interface roughness, rather than diffusion smearing. We discuss the possibility to distinguish by means of spectroscopy of reflected electrons either material under analysis is a single phase or a mixture of two phases.

Författare

V.P. Afanas´ev

National Research University Moscow Power Engineering Institute

A.V. Lubenchenko

National Research University Moscow Power Engineering Institute

M.V. Lukashevsky

National Research University Moscow Power Engineering Institute

Mats Norell

Chalmers, Material- och tillverkningsteknik

Alexey Pavolotskiy

Chalmers, Institutionen för radio- och rymdvetenskap, Avancerad mottagarutveckling

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 101 064912 1-6

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1063/1.2716385