Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 um Si3N4 /SiO2 membranes
Artikel i vetenskaplig tidskrift, 2007

The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4 /SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 um Si3 N4 /SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.

terahertz

superconductivity

astronomy

bolometer

camera

HEB

mixer

NbN

Författare

Serguei Cherednichenko

Chalmers, Teknisk fysik, Fysikalisk elektronik

Vladimir Drakinskiy

Chalmers, Teknisk fysik, Fysikalisk elektronik

Jean Baubert

Jean-Michel Krieg

Boris Voronov

Gregory Gol'tsman

Vincent Desmaris

Chalmers, Institutionen för radio- och rymdvetenskap, Avancerad mottagarutveckling

Journal of Applied Physics

Vol. 101 124508-1-(6)-

Ämneskategorier

Den kondenserade materiens fysik