Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO2 toward all-carbon electronics
Artikel i vetenskaplig tidskrift, 2018
A method of producing large area continuous graphene directly on SiO 2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO 2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene "lands onto" SiO 2 . Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.
Författare
Y. B. Dong
Beijing University of Technology
Yiyang Xie
Beijing University of Technology
C. Xu
Beijing University of Technology
X. J. Li
Beijing University of Technology
Jun Deng
Beijing University of Technology
X. Fan
Beijing University of Technology
G. Z. Pan
Beijing University of Technology
Qiuhua Wang
Beijing University of Technology
Fangzhu Xiong
Beijing University of Technology
Yafei Fu
Beijing University of Technology
Jie Sun
Beijing University of Technology
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
APL Materials
2166-532X (eISSN)
Vol. 6 2 026802Ämneskategorier
Annan materialteknik
Den kondenserade materiens fysik
DOI
10.1063/1.4992077