Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO<inf>2</inf>toward all-carbon electronics
Artikel i vetenskaplig tidskrift, 2018

A method of producing large area continuous graphene directly on SiO 2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO 2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene "lands onto" SiO 2 . Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.

Författare

Y. B. Dong

Beijing University of Technology

Yiyang Xie

Beijing University of Technology

C. Xu

Beijing University of Technology

X. J. Li

Beijing University of Technology

Jun Deng

Beijing University of Technology

X. Fan

Beijing University of Technology

G. Z. Pan

Beijing University of Technology

Qiuhua Wang

Beijing University of Technology

Fangzhu Xiong

Beijing University of Technology

Yafei Fu

Beijing University of Technology

Jie Sun

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Beijing University of Technology

APL Materials

2166-532X (eISSN)

Vol. 6 2 026802

Ämneskategorier

Annan materialteknik

Den kondenserade materiens fysik

DOI

10.1063/1.4992077

Mer information

Senast uppdaterat

2018-02-22