Vertical-Cavity Silicon-Integrated Laser with In-Plane Waveguide Emission at 850 nm
Artikel i vetenskaplig tidskrift, 2018

A continuous-wave electrically-pumped short-wavelength hybrid vertical-cavity silicon-integrated laser (VCSIL) with in-plane emission into a silicon nitride (SiN) waveguide is experimentally demonstrated. The coupling from the vertical cavity into the in-plane SiN waveguide is achieved by a weak grating on the SiN waveguide placed inside the cavity. The grating provides coupling, sets the polarization of the lasing output, and provides transverse mode control. A 5 mu m oxide-aperture diameter device with a threshold current of 1.1 mA produces 73 mu W single-sided waveguide-coupled optical output power at 2.6 mA bias current at a wavelength of 856 nm and a side-mode suppression ratio (SMSR) of 29 dB.

vertical-cavity silicon-integrated laser

silicon photonics

semiconductor lasers

intra-cavity grating

on-chip laser source

Författare

Sulakshna Kumari

Universiteit Gent

Emanuel Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Gunther Roelkens

Universiteit Gent

Roel G. Baets

Universiteit Gent

Laser and Photonics Reviews

1863-8880 (ISSN) 1863-8899 (eISSN)

Vol. 12 2 1700206- 1700206

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Atom- och molekylfysik och optik

Nanoteknik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1002/lpor.201700206

Mer information

Senast uppdaterat

2018-05-08