A direct carrier I/Q modulator for high-speed communication at D-band using 130nm SiGe BiCMOS technology
Paper i proceeding, 2017

This paper presents a 110–170 GHz direct conversion I/Q modulator realized in 130 nm SiGe BiCMOS technology with ft/fmax values of 250 GHz/ 370 GHz. The design is based on double-balanced Gilbert mixer cells with on-chip quadrature LO phase shifter and RF balun. In single-sideband operation, the modulator exhibits up to 9.5 dB conversion gain and has measured 3 dB IF bandwidth of 12 GHz. The measured image rejection ratio and LO to RF isolation are as high as 20 dB and 31 dB respectively. Measured input P1dB is −17 dBm at 127 GHz output. The dc power consumption is 53 mW. The active chip area is 620 pm∗ 480 pm including the RF and LO baluns. The circuit is capable of transmitting more than 12 Gbit/s QPSK signal.

5G

I/Q modulator

D-band

SiGe BiCMOS

millimeter wave

Gilbert cell mixer

Författare

Sona Carpenter

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2017 12th European Microwave Integrated Circuits Conference (EuMIC),

Ämneskategorier

Telekommunikation

Kommunikationssystem

Annan elektroteknik och elektronik

ISBN

978-1-5386-3966-5