28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE
Artikel i vetenskaplig tidskrift, 2018

A single-stage, symmetric Doherty power amplifier (PA) in 45 nm CMOS silicon on insulator at 28 GHz is presented. The PA achieves a saturated output power of 22.4 dBm, a peak power added efficiency (PAE) of 40%, and a 6 dB backoff PAE of 28%. High efficiency is attained due to low combiner losses of 0.5 dB, obtained using a recently developed combiner synthesis technique. A compact modeling approach for parasitic-extracted PA transistors is presented, which considerably reduced simulation time. The PA is based on two-stack power devices and occupies overall chip area of only 0.63 mm(2), including pads.

power amplifier (PA)

28 GHz band

5G transmitters

CMOS

Doherty

millimeter wave (mm-wave)

silicon on insulator (SOI)

Författare

Narek Rostomyan

University of California

MUSTAFA ÖZEN

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Peter Asbeck

University of California

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 28 5 446-448

Ämneskategorier

Telekommunikation

Annan fysik

Annan elektroteknik och elektronik

DOI

10.1109/LMWC.2018.2813882

Mer information

Senast uppdaterat

2022-04-06