28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE
Artikel i vetenskaplig tidskrift, 2018

A single-stage, symmetric Doherty power amplifier (PA) in 45 nm CMOS silicon on insulator at 28 GHz is presented. The PA achieves a saturated output power of 22.4 dBm, a peak power added efficiency (PAE) of 40%, and a 6 dB backoff PAE of 28%. High efficiency is attained due to low combiner losses of 0.5 dB, obtained using a recently developed combiner synthesis technique. A compact modeling approach for parasitic-extracted PA transistors is presented, which considerably reduced simulation time. The PA is based on two-stack power devices and occupies overall chip area of only 0.63 mm(2), including pads.

power amplifier (PA)

millimeter wave (mm-wave)

CMOS

5G transmitters

Doherty

silicon on insulator (SOI)

28 GHz band

Författare

Narek Rostomyan

University of California

MUSTAFA ÖZEN

Mikrovågselektronik

Peter Asbeck

University of California

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 28 5 446-448

Ämneskategorier

Datorteknik

Telekommunikation

Annan elektroteknik och elektronik

DOI

10.1109/LMWC.2018.2813882

Mer information

Senast uppdaterat

2018-05-31