In this thesis, we demonstrate that a disordered superconductor with a high kinetic inductance can realize a low microwave loss, non-dissipative circuit element with an impedance greater than the quantum resistance (Rq = h/4e^2 = 6.5kΩ). This element, known as a superinductor, can produce a quantum circuit where charge fluctuations are suppressed.
We have fabricated and characterized 20nm thick niobium-nitride nanowires with a width of 40nm, implementing a superinductance with impedance Z = 6.795kΩ. We demonstrate internal quality factors Qi = 2.5×10^4 at single photon excitation, which is signiﬁcantly higher than values reported in devices with similar materials and geometries. Moreover, we show that the dominant dissipation in our nanowires is not an intrinsic property of the disordered ﬁlms, but can instead be fully understood within the well-studied framework of two-level systems.