A Low-loss D-band Chip-to-Waveguide Transition Using Unilateral Fin-line Structure
Paper i proceeding, 2018

This paper presents a D-band interconnect realized using unilateral finline structure. The interconnect consists of a microstrip line implemented on a 75μm-thick SiC substrate. The line then couples to a unilateral finline taper that is mounted in the E-plane of a standard WR-6.5 D-band waveguide. The interconnect achieves low insertion loss and covers very wide frequency range. The measured minimum insertion loss is 0.67 dB and the maximum is 2 dB per transition across the entire D-band covering the frequency range 110-170 GHz. The transition does not require any galvanic contacts nor any special processing and can be implemented in any of the commercially available semiconductor technologies. This solution provides low-loss wideband packaging technique that enables millimeter-wave systems assembly using a high-performance simple approach.

millimeter waves

finline

D-band

interconnects

waveguide transition

THz

Författare

Ahmed Adel Hassona

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Omid Habibpour

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Vincent Desmaris

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

Vessen Vassilev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Victor Belitsky

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

International Microwave Symposium (IMS2018)
Philadelphia, ,

Ämneskategorier

Övrig annan teknik

Annan fysik

Annan elektroteknik och elektronik

DOI

10.1109/MWSYM.2018.8439643

Mer information

Senast uppdaterat

2018-08-22