Correlation between Electrical Transport and Nanoscale Strain in InAs/In0.6Ga0.4As Core-Shell Nanowires
Artikel i vetenskaplig tidskrift, 2018
Free-standing semiconductor nanowires constitute an ideal material system for the direct manipulation of electrical and optical properties by strain engineering. In this study, we present a direct quantitative correlation between electrical conductivity and nanoscale lattice strain of individual InAs nanowires passivated with a thin epitaxial In0.6Ga0.4As shell. With an in situ electron microscopy electromechanical testing technique, we show that the piezoresistive response of the nanowires is greatly enhanced compared to bulk InAs, and that uniaxial elastic strain leads to increased conductivity, which can be explained by a strain-induced reduction in the band gap. In addition, we observe inhomogeneity in strain distribution, which could have a reverse effect on the conductivity by increasing the scattering of charge carriers. These results provide a direct correlation of nanoscale mechanical strain and electrical transport properties in free-standing nanostructures.
InAs nanowire
strain mapping
piezoresistance
transmission electron microscopy
Författare
Lunjie Zeng
Chalmers, Fysik, Eva Olsson Group
Christoph Gammer
Erich Schmid Institute of Materials Science (ESI)
Burak Ozdol
Lawrence Berkeley National Laboratory
Thomas Nordqvist
Niels Bohr Institute
J. Nygard
Niels Bohr Institute
P. Krogstrup
Niels Bohr Institute
Andrew M. Minor
Lawrence Berkeley National Laboratory
University of California
Wolfgang Jäger
Christian-Albrechts-Universität zu Kiel
Chalmers, Fysik, Eva Olsson Group
Eva Olsson
Chalmers, Fysik, Eva Olsson Group
Nano Letters
1530-6984 (ISSN) 1530-6992 (eISSN)
Vol. 18 8 4949-4956Investigation of strain effects of semiconductor nanowires by in situ microscopy transmission electron microscopy
Vetenskapsrådet (VR) (2016-04618), 2017-01-01 -- 2020-12-31.
Ämneskategorier
Analytisk kemi
Materialkemi
Den kondenserade materiens fysik
DOI
10.1021/acs.nanolett.8b01782