Correlation between Electrical Transport and Nanoscale Strain in InAs/In0.6Ga0.4As Core-Shell Nanowires
Artikel i vetenskaplig tidskrift, 2018

Free-standing semiconductor nanowires constitute an ideal material system for the direct manipulation of electrical and optical properties by strain engineering. In this study, we present a direct quantitative correlation between electrical conductivity and nanoscale lattice strain of individual InAs nanowires passivated with a thin epitaxial In0.6Ga0.4As shell. With an in situ electron microscopy electromechanical testing technique, we show that the piezoresistive response of the nanowires is greatly enhanced compared to bulk InAs, and that uniaxial elastic strain leads to increased conductivity, which can be explained by a strain-induced reduction in the band gap. In addition, we observe inhomogeneity in strain distribution, which could have a reverse effect on the conductivity by increasing the scattering of charge carriers. These results provide a direct correlation of nanoscale mechanical strain and electrical transport properties in free-standing nanostructures.

InAs nanowire

transmission electron microscopy

strain mapping



Lunjie Zeng

Chalmers, Fysik, Eva Olsson Group

Christoph Gammer

Erich Schmid Institute of Materials Science (ESI)

Burak Ozdol

Lawrence Berkeley National Laboratory

Thomas Nordqvist

Niels Bohr Institute

J. Nygard

Niels Bohr Institute

P. Krogstrup

Niels Bohr Institute

Andrew M. Minor

University of California

Lawrence Berkeley National Laboratory

Wolfgang Jäger

Chalmers, Fysik, Eva Olsson Group

Christian-Albrechts-Universität zu Kiel

Eva Olsson

Chalmers, Fysik, Eva Olsson Group

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 18 8 4949-4956

Investigation of strain effects of semiconductor nanowires by in situ microscopy transmission electron microscopy

Vetenskapsrådet (VR) (2016-04618), 2017-01-01 -- 2020-12-31.


Nanovetenskap och nanoteknik


Analytisk kemi


Den kondenserade materiens fysik



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