Correlation between Electrical Transport and Nanoscale Strain in InAs/In0.6Ga0.4As Core-Shell Nanowires
Artikel i vetenskaplig tidskrift, 2018
InAs nanowire
strain mapping
piezoresistance
transmission electron microscopy
Författare
Lunjie Zeng
Chalmers, Fysik, Eva Olsson Group
Christoph Gammer
Erich Schmid Institute of Materials Science (ESI)
Burak Ozdol
Lawrence Berkeley National Laboratory
Thomas Nordqvist
Niels Bohr Institute
J. Nygard
Niels Bohr Institute
P. Krogstrup
Niels Bohr Institute
Andrew M. Minor
Lawrence Berkeley National Laboratory
University of California
Wolfgang Jäger
Christian-Albrechts-Universität zu Kiel
Chalmers, Fysik, Eva Olsson Group
Eva Olsson
Chalmers, Fysik, Eva Olsson Group
Nano Letters
1530-6984 (ISSN) 1530-6992 (eISSN)
Vol. 18 8 4949-4956Investigation of strain effects of semiconductor nanowires by in situ microscopy transmission electron microscopy
Vetenskapsrådet (VR) (2016-04618), 2017-01-01 -- 2020-12-31.
Ämneskategorier
Analytisk kemi
Materialkemi
Den kondenserade materiens fysik
DOI
10.1021/acs.nanolett.8b01782