A 140 GHz Transmitter with an Integrated Chip-to-Waveguide Transition using 130nm SiGe BiCMOS Process
Paper i proceeding, 2018

This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with f(t)/f(max) values of 250 GHz/ 370 GHz. This design comprises of a frequency sixtupler, a balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The frequency multiplier operates in wide frequency band from 110-147 GHz, while the amplifier operates between 115-155 GHz. The total DC power consumption of the chipset is 420 mW. The chip size is 3 mm x 0.73 mm including chip-to-waveguide transition. The transmitter gives -4 dBm output power at 140 GHz and can operate between 129-148 GHz. Wireless data transmission up to 6 Gbps is measured using PSK and QAM modulation schemes.

chip-to-waveguide transition

transmitter chipset





Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mingquan Bao

Ericsson AB

Yinggang Li

Ericsson AB

Ahmed Adel Hassona

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

James Campion

Kungliga Tekniska Högskolan (KTH)

Joachim Oberhammer

Kungliga Tekniska Högskolan (KTH)

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Ericsson AB

Asia Pacific Microwave Conference-Proceedings


Asia-Pacific Microwave Conference (APMC)
Kyoto, Japan,

Micromachined terahertz systems -a new heterogeneous integration platform enabling the commercialization of the THz frequency spectrum (M3TERA)

Europeiska kommissionen (Horisont 2020), 2015-02-01 -- 2017-12-31.




Annan elektroteknik och elektronik

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