Transimpedance amplifiers with 133 GHz bandwidth on 130 nm indium phosphide double heterojunction bipolar transistors
Artikel i vetenskaplig tidskrift, 2019

In this work, the authors present two transimpedance amplifier (TIA) circuits designed for fibre optical interconnect systems. They compare a common base (CB) topology with a common emitter (CE) shunt shunt feedback topology in terms of frequency response, power consumption, noise, and input impedance. The two TIAs are designed on a 130 nm indium phosphide double heterojunction bipolar transistor technology from Teledyne Scientific Company (TSC) with an 1 f(t)/f(max). of 520 GHz/1.15 TED and are measured in the frequency and time domains. They exhibit a transimpedance gain of 42 dBS2 with a 133 GHz bandwidth, the highest bandwidth reported in the literature and power consumption of 32.3 nikV tqr the C13 and 25.5 mW for the CE. Eye diagram measurements were conducted up to 64 Ghps and input referred noise density was measured at 30.2 pAh/root Hz for the CB and 13.9 pA.root Hz for the CE.

Författare

Stavros Giannakopoulos

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

I. Darwazeh

University College London (UCL)

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Electronics Letters

0013-5194 (ISSN) 1350-911X (eISSN)

Vol. 55 9 521-522

Ämneskategorier

Signalbehandling

Annan elektroteknik och elektronik

DOI

10.1049/el.2018.8135

Mer information

Senast uppdaterat

2019-08-09