Improved bandwidth of a 2THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer
Artikel i vetenskaplig tidskrift, 2019

We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.

GaN buffer layer

gain and noise bandwidth

HEB

Författare

S. Antipov

Moscow State Pedagogical University

A. Trifonov

Moscow State Pedagogical University

Sascha Krause

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

Denis Meledin

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

N. Kaurova

Moscow State Pedagogical University

M. Rudzinski

Instytut Technologii Materialow Elektronicznych (ITME)

Vincent Desmaris

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

Victor Belitsky

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

G. Goltsman

Natl Res Univ Higher Sch Econ

Moscow State Pedagogical University

Superconductor Science and Technology

0953-2048 (ISSN) 1361-6668 (eISSN)

Vol. 32 7 075003

Ämneskategorier

Annan fysik

Signalbehandling

Den kondenserade materiens fysik

DOI

10.1088/1361-6668/ab137b

Mer information

Senast uppdaterat

2019-08-09