Critical atomic-level processing technologies: Remote plasma-enhanced atomic layer deposition and atomic layer etching
Reviewartikel, 2018

As feature sizes of devices shrink every year, deposition and etching processes change to be very challenge, especially for sub-7 nm technology node. The acceptable variability of feature size is expected to be several atoms of silicon/germanium in the future. Therefore, Remote Plasma-Enhanced Atomic Layer Deposition (RPE-ALD) and Atomic Layer Etching (ALE) change to be more and more important in the semiconductor fabrication. Due to their self-limiting behavior, the atomic-scale fidelity could be realized for both of them in the processes. Compared with traditional Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) methods, atomic-scale thickness controllability and good conformality can be achieved by RPE-ALD. Unlike conventional plasma etching, atomicscale precision and excellent depth uniformity can be achieved by ALE. The fundamentals and applications of RPE-ALD and ALE have been discussed in this paper. Using the combination of them, atomic-level deposition/etch-back method is also mentioned for achieving high quality ultra-thin films on three dimensional (3D) features.

Atomic layer etching

Selflimiting behavior

Ultra-large scale integration system

Low deposition temperature

Plasma-enhanced atomic layer deposition

Atomic-level deposition/etch-back method

Författare

G. Yuan

Shanghai University

Haohao Li

Shanghai University

B. Shan

Shanghai University

Johan Liu

Shanghai University

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

Micro and Nanosystems

1876-4029 (ISSN) 1876-4037 (eISSN)

Vol. 10 2 76-83

Ämneskategorier

Annan fysik

Annan materialteknik

Den kondenserade materiens fysik

DOI

10.2174/1876402910666181030092735

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Senast uppdaterat

2019-07-01