High-power single transverse and polarization mode VCSEL for silicon photonics integration
Artikel i vetenskaplig tidskrift, 2019

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL. While the VCSEL is specifically designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications.

Författare

Erik Haglund

OptiGOT AB

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Mehdi Jahed

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

J. Goyvaerts

Universiteit Gent

Roel G. Baets

Universiteit Gent

Gunther Roelkens

Universiteit Gent

Marc Rensing

Tyndall National Institute at National University of Ireland, Cork

Peter O’Brien

Tyndall National Institute at National University of Ireland, Cork

Optics Express

1094-4087 (ISSN)

Vol. 27 13 18892-18899

Ämneskategorier

Atom- och molekylfysik och optik

Annan fysik

Annan elektroteknik och elektronik

DOI

10.1364/OE.27.018892

Mer information

Senast uppdaterat

2019-07-08