High-power single transverse and polarization mode VCSEL for silicon photonics integration
Artikel i vetenskaplig tidskrift, 2019
© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL. While the VCSEL is specifically designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications.
Författare
Erik Haglund
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
OptiGOT AB
Mehdi Jahed
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Johan Gustavsson
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Anders Larsson
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
J. Goyvaerts
Universiteit Gent
Roel G. Baets
Universiteit Gent
Gunther Roelkens
Universiteit Gent
Marc Rensing
Tyndall National Institute at National University of Ireland, Cork
Peter O’Brien
Tyndall National Institute at National University of Ireland, Cork
Optics Express
1094-4087 (ISSN) 10944087 (eISSN)
Vol. 27 13 18892-18899Ämneskategorier
Atom- och molekylfysik och optik
Annan fysik
Annan elektroteknik och elektronik
DOI
10.1364/OE.27.018892