High-power single transverse and polarization mode VCSEL for silicon photonics integration
Journal article, 2019
© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL. While the VCSEL is specifically designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications.
Author
Erik Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
OptiGOT AB
Mehdi Jahed
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Johan Gustavsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
J. Goyvaerts
Ghent university
Roel G. Baets
Ghent university
Gunther Roelkens
Ghent university
Marc Rensing
Tyndall National Institute at National University of Ireland, Cork
Peter O’Brien
Tyndall National Institute at National University of Ireland, Cork
Optics Express
1094-4087 (ISSN) 10944087 (eISSN)
Vol. 27 13 18892-18899Subject Categories
Atom and Molecular Physics and Optics
Other Physics Topics
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1364/OE.27.018892