High-power single transverse and polarization mode VCSEL for silicon photonics integration
Journal article, 2019

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL. While the VCSEL is specifically designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications.

Author

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Chalmers, Microtechnology and Nanoscience (MC2), Photonics

OptiGOT AB

[Person 84f39f40-0309-49c9-b65a-07d4ffc37d28 not found]

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

[Person a096b75b-384a-4089-a24f-afa6bbb82219 not found]

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

[Person 69ffaa92-99ad-4f3d-b9d3-d3235ff3fea9 not found]

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

[Person ad05a541-2d35-43e8-b98b-98e97602af9a not found]

Ghent university

[Person 3f7eb8bf-89e8-466e-8e60-a24d98bad471 not found]

Ghent university

[Person 04a6483b-cfed-4802-825d-cdf2239f111f not found]

Ghent university

[Person a44d8e77-4561-4d77-ba81-c65c5f911bd3 not found]

Tyndall National Institute at National University of Ireland, Cork

[Person 4b6557ba-f2c9-47dd-ab37-5d50127b5557 not found]

Tyndall National Institute at National University of Ireland, Cork

Optics Express

1094-4087 (ISSN) 10944087 (eISSN)

Vol. 27 13 18892-18899

Subject Categories (SSIF 2011)

Atom and Molecular Physics and Optics

Other Physics Topics

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1364/OE.27.018892

More information

Latest update

2/8/2021 1