High-power single transverse and polarization mode VCSEL for silicon photonics integration
Journal article, 2019

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL. While the VCSEL is specifically designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications.

Author

Erik Haglund

OptiGOT AB

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Mehdi Jahed

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

J. Goyvaerts

Ghent university

Roel G. Baets

Ghent university

Gunther Roelkens

Ghent university

Marc Rensing

Tyndall National Institute at National University of Ireland, Cork

Peter O’Brien

Tyndall National Institute at National University of Ireland, Cork

Optics Express

1094-4087 (ISSN)

Vol. 27 13 18892-18899

Subject Categories

Atom and Molecular Physics and Optics

Other Physics Topics

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1364/OE.27.018892

More information

Latest update

7/8/2019 2