InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers
Artikel i vetenskaplig tidskrift, 2020

This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of 112 mu W. This result was obtained by using 100-nm gate length InP HEMTs with improved transconductance at low drain current through a scaled-down gate-channel distance while maintaining a low gate leakage current with the use of an InP etch stop layer and Pt gate metal. The noise performance of InP HEMTs was demonstrated in a 4-8 GHz (C-band) three-stage hybrid LNA at the ambient temperature of 5 K. At a dc power dissipation of 300 mu W, the average noise temperature was 2.8 K with 27 dB gain. At a dc power dissipation of 112 mu W, the LNA exhibited an average noise temperature of 4.1 K with a gain of 20 dB. The presented results demonstrate the large potential of InP HEMT technology for sub-mW cryogenic LNA design.

C-band

InP high-electron-mobility transistor (InP HEMT)

low-noise amplifier (LNA)

noise

power dissipation

Cryogenic

Författare

Eunjung Cha

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Niklas Wadefalk

Low Noise Factory AB

Giuseppe Moschetti

Qamcom Research & Technology

Arsalan Pourkabirian

Low Noise Factory AB

Jorgen Stenarson

Low Noise Factory AB

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 41 7 1005-1008

Ämneskategorier

Signalbehandling

Annan elektroteknik och elektronik

DOI

10.1109/LED.2020.3000071

Mer information

Senast uppdaterat

2020-09-04