Thin-film ultraviolet light-emitting diodes realized by electrochemical etching of AlGaN
Doktorsavhandling, 2020
In this work, we demonstrate a new device platform to realize UV LEDs with a TFFC design based on electrochemical etching to remove the substrate. In the first part of this work, electrochemical (EC) etching of AlGaN layers with a high Al content up to 50% was demonstrated, which enabled the separation of epitaxial LED layers from their substrate while maintaining the high quality of the active region.
The second key technological step was the integration of EC etching in a standard UV LED fabrication process, which required protection schemes to prevent parasitic electrochemical etching of the LED structure and the development of a device design compatible with flip-chip bonding. Finally, this work was completed by the first demonstration of a TFFC UVB LED using electrochemical etching.
electrochemical etching
substrate removal
thin-film flip-chip
thermocompression bonding
light-emitting diodes
AlGaN
heterogeneous integration
LEDs
ultraviolet light
UVB
Författare
Michael Alexander Bergmann
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Electrochemical etching of AlGaN for the realization of thin-film devices
Applied Physics Letters,; Vol. 115(2019)p. 182103-
Artikel i vetenskaplig tidskrift
Thin-film flip-chip UVB LEDs realized by electrochemical etching
Applied Physics Letters,; Vol. 116(2020)p. 121101-
Artikel i vetenskaplig tidskrift
Michael A. Bergmann, Johannes Enslin, Martin Guttmann, Luca Sulmoni, Neysha Lobo-Ploch, Filip Hjort, Tim Kolbe, Tim Wernicke, Michael Kneissl, and Åsa Haglund, "High-efficiency UVB LEDs using a thin-film flip-chip design and surface roughening"
Styrkeområden
Nanovetenskap och nanoteknik (SO 2010-2017, EI 2018-)
Ämneskategorier
Annan fysik
Nanoteknik
Den kondenserade materiens fysik
Infrastruktur
Chalmers materialanalyslaboratorium
Nanotekniklaboratoriet
ISBN
978-91-7905-368-0
Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 4835
Utgivare
Chalmers tekniska högskola
A423 (Kollektorn) at the Department of Microtechnology and Nanoscience (MC2), Kemivägen 9, Gothenburg
Opponent: Prof. Jung Han, Department of Electrical Engineering, Yale University, USA