Packaging Technique of Highly Integrated Circuits Based on EBG Structure for +100 GHz Applications
Paper i proceeding, 2020

This work presents an on-chip packaging concept suitable for monolithic microwave integrated circuits (MMIC) operating above 100 GHz. The concept relies on using an on-chip transition that couples the signal to a standard air-filled waveguide. The proposed solution utilizes an electromagnetic band-gap (EBG) structure realized using bed of nails to prevent the propagation of parallel plate modes and improve the coupling between the MMIC and the waveguide. The technique shows an average insertion loss of only 0.6 dB across the frequency range 110 - 155 GHz. Moreover, the concept is demonstrated in a D-band amplifier circuitry that is fabricated in an indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Experimental results show that the amplifier exhibits a maximum gain of 18.5 dB with no sign of propagation of any parallel plate modes. This work presents a verified solution for packaging high-frequency integrated circuits, and hence paves the way towards higher system integration above 100 GHz.

D-band

interconnect

waveguide transition

packaging

Författare

Ahmed Adel Hassona

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Vessen Vassilev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Ashraf Uz Zaman

Chalmers, Elektroteknik, Kommunikations- och antennsystem, Antennsystem

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2020 14th European Conference on Antennas and Propagation (EuCAP)

European Conference on Antennas and Propagation (EuCAP)
Copenhagen, Denmark,

Ämneskategorier

Övrig annan teknik

Annan fysik

Annan elektroteknik och elektronik

DOI

10.23919/EuCAP48036.2020.9135289

Mer information

Skapat

2020-09-03