D-band SiGe transceiver modules based on silicon-micromachined integration
Paper i proceeding, 2019
This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chipsets in a commercial 130nm SiGe BiCMOS process. The interconnect between the chipset and the package is non-galvanic and is realized in silicon micromachining technique. After successful fabrication and assembly, the individual Tx and Rx modules as well as the combined Tx-Rx link were tested using CW signals. Then realtime data transport over the link were carried out using different modulation formats and bandwidths. With 16QAM over a 750 MHz channel a 2.66 Gbit/s data rate was demonstrated with BER<10-11. These tests show that the D-band modules, obtained in a single implementation trial, work well functionally. The interconnect method is applicable to the full D-band and expected to also support frequencies in the sub-millimeter-wave range where traditional methods become challenging to apply.
D-band
Non-galvanic interconnect
SiGe hBT
Micromachining
Point-to-point links
Författare
Y. Li
Ericsson AB
Mikael Hörberg
Ericsson AB
Klas Eriksson
Ericsson AB
James Campion
Kungliga Tekniska Högskolan (KTH)
Ahmed Adel Hassona
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Sandro Vecchiattini
Ericsson AB
Torbjorn S. Dahl
Ericsson AB
Richard Lindman
Ericsson AB
M. Q. Bao
Ericsson AB
Zhongxia Simon He
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
F. Dielacher
Infineon Technologies
Joachim Oberhammer
Kungliga Tekniska Högskolan (KTH)
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Ericsson AB
Jonas Hansryd
Ericsson AB
Asia-Pacific Microwave Conference Proceedings, APMC
Vol. 2019-December 883-885 9038198
978-172813517-5 (ISBN)
2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
Singapore, Singapore,
Singapore, Singapore,
Ämneskategorier
Datorteknik
Signalbehandling
Annan elektroteknik och elektronik
DOI
10.1109/APMC46564.2019.9038198