D-band SiGe transceiver modules based on silicon-micromachined integration
Paper i proceeding, 2019

This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chipsets in a commercial 130nm SiGe BiCMOS process. The interconnect between the chipset and the package is non-galvanic and is realized in silicon micromachining technique. After successful fabrication and assembly, the individual Tx and Rx modules as well as the combined Tx-Rx link were tested using CW signals. Then realtime data transport over the link were carried out using different modulation formats and bandwidths. With 16QAM over a 750 MHz channel a 2.66 Gbit/s data rate was demonstrated with BER<10-11. These tests show that the D-band modules, obtained in a single implementation trial, work well functionally. The interconnect method is applicable to the full D-band and expected to also support frequencies in the sub-millimeter-wave range where traditional methods become challenging to apply.


Non-galvanic interconnect

SiGe hBT


Point-to-point links


Y. Li

Ericsson AB

Mikael Hörberg

Ericsson AB

Klas Eriksson

Ericsson AB

James Campion

Kungliga Tekniska Högskolan (KTH)

Ahmed Adel Hassona

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Sandro Vecchiattini

Ericsson AB

Torbjorn S. Dahl

Ericsson AB

Richard Lindman

Ericsson AB

M. Q. Bao

Ericsson AB

Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

F. Dielacher

Infineon Technologies

Joachim Oberhammer

Kungliga Tekniska Högskolan (KTH)

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Ericsson AB

Jonas Hansryd

Ericsson AB

Asia-Pacific Microwave Conference Proceedings, APMC

Vol. 2019-December 883-885 9038198
978-172813517-5 (ISBN)

2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
Singapore, Singapore,




Annan elektroteknik och elektronik



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