Noise performance of a balanced waveguide NbN HEB mixer utilizing a GaN buffer-layer at 1.3 THz
Paper i proceeding, 2018

We report on the initial measurement results of a balanced waveguide phonon cooled NbN mixer employing a 5.5 µm thin GaN membrane, which was operated at frequencies around 1.3 THz. The uncorrected DSB noise temperature amounts to approximately 750 K at 1 GHz IF and increases to only 900 K at 4 GHz IF, which was deduced from the standard Y-factor measurement technique. The recorded IF spectrum from 0.5 GHz to 8 GHz suggests a measured noise bandwidth of approximately 7 GHz owing to the employment of a GaN buffer-layer, which promotes the single crystal growth of NbN films and provides high phonon transparency, thus lowering the phonon escape time. We emphasize with the implementation of a waveguide balanced receiver scheme and using NbN/GaN mixers the possibility to extend the operational IF range of phonon cooled NbN HEBs, yet providing low noise performance.

Hot Electron Bolometer mixer

THz receiver

NbN thin film

Författare

Sascha Krause

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

Denis Meledin

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

Vincent Desmaris

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

Alexey Pavolotskiy

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

Victor Belitsky

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

2018 29th IEEE International Symposium on Space Terahertz Technology, ISSTT 2018

36-39

9th IEEE International Symposium on Space Terahertz Technology, ISSTT 2018
Pasadena, USA,

Ämneskategorier

Kommunikationssystem

Signalbehandling

Annan elektroteknik och elektronik

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Senast uppdaterat

2021-01-21