G-band Power Amplifiers in 130 nm InP Technology
Paper i proceeding, 2021

Two G-band three-stage power amplifiers (PA), a Darlington PA and a stacked PA, are designed and manufactured in 130 nm InP HBT Technology. The stacked PA shows a 70 GHz bandwidth of S21 (from 140 GHz to 210 GHz) with a peak S21 gain of 30 dB. It has a fractional bandwidth (FBW) of 40%. While the Darlington PA demonstrates a 90 GHz bandwidth of S21 (from 130 GHz to 220 GHz) with a peak S21 gain of 20 dB, the FBW of the Darlington PA is 51% which is highest among the G-band PAs. Furthermore, the Darlington PA has a saturated output power, Psat, of 9.6 dBm at 150 GHz, and a power added efficiency (PAE) of 14.7% with a 55 mW de power consumption. The stacked PA has a Psat of 13.4 dBm at 150 GHz, and a PAE of 17.3% with a 108 mW dc power consumption. To authors' knowledge, the stacked PA has the highest PAE among the D/G-band PAs published in the literature.

G-band

power amplifier

InP

Författare

M. Q. Bao

Ericsson AB

Vessen Vassilev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

David Gustafsson

Ericsson AB

Herbert Zirath

Ericsson AB

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

85-88 9337340

15th European Microwave Integrated Circuits Conference, EuMIC 2020
Utrecht, Netherlands,

Ämneskategorier

Telekommunikation

Marin teknik

Annan elektroteknik och elektronik

DOI

10.1109/EuMIC48047.2021.00013

Mer information

Senast uppdaterat

2021-03-17