Multi-Gigabit RF-DAC Based Duobinary/PAM-3 Modulator in 130 nm SiGe HBT
Paper i proceeding, 2021

In this work a combined duobinary and PAM-3 (Pulse Amplitude Modulation) modulator is designed and fabricated using a 130 nm silicon germanium process. The RF-DAC based duobinary/PAM-3 modulator covers 95 GHz of bandwidth between 35 GHz and 130 GHz and uses three-valued logic. Together with a power detector, high data rate links can be realized without carrier recovery or phase recovery, thus simplifying the overall design. Data rates up to 30 Gbps is demonstrated using duobinary modulation with a symbol error rate (SER) of 6.4 * 10-6. For PAM-3 modulation data rates up to 28 Gbps is demonstrated with a SER of 1.4 * 10-6. The wide bandwidth and high data rate makes it suitable to be used together with a polymer microwave fiber (PMF) for a low cost and robust system, instead of optic fiber.

modulator

ternary

SiGe

RF-DAC

Duobinary

pulse amplitude modulation

Författare

Frida Strömbeck

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2020 15th European Microwave Integrated Circuits Conference (EuMIC)

7281-7040 (ISSN) 7281-7040 (eISSN)

257-260 9337462

15th European Microwave Integrated Circuits Conference, EuMIC 2020
Utrecht, Netherlands,

Ämneskategorier

Nanoteknik

DOI

10.1109/EuMIC48047.2021.00076

Mer information

Senast uppdaterat

2021-03-25