Silicon-Based IC-Waveguide Integration for Compact and High-Efficiency mm-Wave Spatial Power Combiners
Artikel i vetenskaplig tidskrift, 2021

A novel and compact millimeter-wave spatial power combiner is developed integrating a Silicon-based integrated circuit (IC) in a metal waveguide. As an initial step towards integrating a silicon-based active IC in a waveguide, a passive back-to-back transition incorporating a 4-way spatial power splitter and combiner is realized at E-band (71–86 GHz). In contrast to existing solutions, the proposed design considers power splitting and combining using a low-loss wireless transition between the IC and the waveguide. The proposed back-to-back structure comprises an IC implemented using Institute for High Performance Microelectronics (IHP’s) 0.13μm SiGe BiCMOS technology integrated into the H-plane of a waveguide. The IC is post-processed and assembled in the waveguide prototype. The measured prototype shows a return loss better than 13 dB, an average insertion loss of 1.7 dB for a single transition, and a fractional bandwidth of 26.4 % (69–90 GHz).

Millimeter-wave technology

electromagnetic coupling

power combiner

Manufacturing

Packaging

system integration

packaging

silicon germanium (SiGe)

passive circuits

Författare

Alhassan Aljarosha

Technische Universiteit Eindhoven

Chalmers, Elektroteknik, Kommunikation, Antenner och Optiska Nätverk

Piyush Kaul

Technische Universiteit Eindhoven

A. B. Smolders

Technische Universiteit Eindhoven

Marion Matters-Kammerer

Technische Universiteit Eindhoven

Rob Maaskant

Chalmers, Elektroteknik, Kommunikation, Antenner och Optiska Nätverk

Technische Universiteit Eindhoven

IEEE Transactions on Components, Packaging and Manufacturing Technology

2156-3950 (ISSN)

Vol. 11 7 1115-1121 9446879

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/TCPMT.2021.3086268

Mer information

Senast uppdaterat

2021-09-22