Silicene nanosheets intercalated in slightly defective epitaxial graphene on a 4H-SiC(0001) substrate
Artikel i vetenskaplig tidskrift, 2022
In the last years, epitaxial graphene (epi-Gr) demonstrated to be an excellent substrate for the synthesis of epitaxial or intercalated two dimensional (2D) materials. Among 2D materials, silicene has been for a long time a dream for the scientific community, for its importance both from the fundamental and the application point of view. Despite the theoretical prediction of silicene energetic viability, experimentally the substrate proved to play a fundamental role in the Si atom adsorption process leading, in case of metal substrates, to a mixed phase formation and, for van der Waals chemical inert substrates, to Si atom intercalation even at room temperature. Such an intercalation has been associated to the presence of surface defects. Very recently it has been shown that hundreds of nanometer area quasi-free standing silicene can be grown on top of an almost ideal epi-Gr layer synthesized on 6H-SiC substrate. In the present paper, using scanning tunneling microscopy and Raman analysis, we demonstrate that a non-ideal (slightly defective) epi-Gr network obtained by thermal decomposition of Si-terminated 4H-SiC(0001) enables the Si atom penetration forming intercalated silicene nanosheets at room temperature, thus opening a path towards controlled intercalation of silicon atoms through epi-Gr and formation of silicene nanosheets for future applications in nanotechnology.
Silicene
2D materials
Graphene
Raman spectroscopy
Scanning tunneling microscopy
Van der Waals heterostructure
Författare
Filippo Fabbri
CNR Istituto Nanoscienze, Pisa
Manuela Scarselli
Universita degli Studi di Roma Tor Vergata
Naveen Shetty
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
2D-Tech
Sergey Kubatkin
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
2D-Tech
Samuel Lara Avila
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
2D-Tech
Mathieu Abel
Aix-Marseille Université
Isabelle Berbezier
Aix-Marseille Université
Holger Vach
Institut Polytechnique de Paris
Matteo Salvato
Universita degli Studi di Roma Tor Vergata
Maurizio De Crescenzi
Universita degli Studi di Roma Tor Vergata
Paola Castrucci
Universita degli Studi di Roma Tor Vergata
Surfaces and Interfaces
2468-0230 (ISSN)
Vol. 33 1022622D material-baserad teknologi för industriella applikationer (2D-TECH)
VINNOVA (2019-00068), 2020-05-01 -- 2024-12-31.
GKN Aerospace Sweden (2D-tech), 2021-01-01 -- 2024-12-31.
Ämneskategorier
Materialkemi
Annan fysik
Den kondenserade materiens fysik
DOI
10.1016/j.surfin.2022.102262