Evaluation and Suppression Method of Turn-off Current Spike for SiC/Si Hybrid Switch
Artikel i vetenskaplig tidskrift, 2023

SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and reduce switching loss. However, when SiC MOSFET turns off, the fast slew rate of drain source voltage causes the current spike in Si IGBT due to the effects of parasitic capacitance charging and carrier recombination, which will produce additional turn-off loss, thus affecting the overall efficiency and temperature rise of the converter. Based on the double pulse test circuit of SiC/Si hybrid switch, the mathematical model of the turn-off transient process is established. The effects of the remnant carrier recombination degree of Si IGBT, the turn-off speed of SiC MOSFET and the working conditions on the turn-off current spike of hybrid switch are evaluated. Although adjusting these parameters can reduce the turn-off current spike somewhat, additional losses will be introduced. Therefore, a new method to suppress the turn-off current spike is proposed to balance the power loss and current stress.

MOSFET

current spike

Switches

suppression method

Delays

hybrid switch

SiC MOSFET/Si IGBT

Insulated gate bipolar transistors

Logic gates

Silicon carbide

Silicon

Författare

Haihong Qin

Nanjing University of Aeronautics and Astronautics

Sixuan Xie

Nanjing University of Aeronautics and Astronautics

Zhenhua Ba

Nanjing University of Aeronautics and Astronautics

Xiang Liu

Nanjing University of Aeronautics and Astronautics

Wenming Chen

Nanjing University of Aeronautics and Astronautics

Dafeng Fu

Nanjing University of Aeronautics and Astronautics

Qian Xun

Chalmers, Elektroteknik, Elkraftteknik

IEEE Access

2169-3536 (ISSN) 21693536 (eISSN)

Vol. 11 26832-26842

Ämneskategorier

Energiteknik

Farkostteknik

Annan elektroteknik och elektronik

DOI

10.1109/ACCESS.2023.3251397

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Senast uppdaterat

2024-03-07