A Physical Approach of MNOS LSI Memory Testing

Artikel i vetenskaplig tidskrift, 1981

User-oriented retention test programs for MNOS LSI memories with built-in test modes have been developed. Their application is demonstrated on the 4 kbit Word Alterable Read Only Memory (WAROM) ER 3400 in a qualification inspection by Bofors Aerotronics. Of particular interest in this program is the retention time, read disturb and endurance to repeated reprogramming. It is shown that repeated write/erase cycling causes significant deterioration in both retention and readability after 105W/E cycles.