High mobility graphene field effect transistors on flexible EVA/PET foils
Artikel i vetenskaplig tidskrift, 2024

Monolayer graphene is a promising material for a wide range of applications, including sensors, optoelectronics, antennas, EMR shielding, flexible electronics, and conducting electrodes. Chemical vapor deposition (CVD) of carbon atoms on a metal catalyst is the most scalable and cost-efficient method for synthesizing high-quality, large-area monolayer graphene. The usual method of transferring the CVD graphene from the catalyst to a target substrate involves a polymer carrier which is dissolved after the transfer process is completed. Due to often unavoidable damage to graphene, as well as contamination and residues, carrier mobilities are typically 1000–3000 cm2(Vs)−1, unless complex and elaborate measures are taken. Here, we report on a simple scalable fabrication method for flexible graphene field-effect transistors that eliminates the polymer interim carrier, by laminating the graphene directly onto office lamination foils, removing the catalyst, and depositing Parylene N as a gate dielectric and encapsulation layer. The fabricated transistors show field- and Hall-effect mobilities of 7000–10 000 cm2(Vs)−1 with a residual charge-carrier density of 2×1011 1 cm−2 at room temperature. We further validate the material quality by terahertz time-domain spectroscopy and observation of the quantum Hall effect at low temperatures in a moderate magnetic field of ∼5 T. The Parylene encapsulation provides long-term stability and protection against additional lithography steps, enabling vertical device integration in multilayer electronics on a flexible platform.

flexible substrates


field-effect transistor



Munis Khan

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Jie Ji

Danmarks Tekniske Universitet (DTU)

Binbin Zhou

Danmarks Tekniske Universitet (DTU)

Peter U. Jepsen

Danmarks Tekniske Universitet (DTU)

Peter Boggild

Danmarks Tekniske Universitet (DTU)

Avgust Yurgens

Fysik, kemi och bioteknik samt matematik och tekniskt basår

2D Materials

2053-1583 (eISSN)

Vol. 11 3

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