Charaterisation of Dynamic Effects in Compact GaN Microwave Front Ends
Licentiatavhandling, 2024
The characterisation of thermal effects focuses on accurately monitoring on-chip hotspots caused by high-power operations. The surrounding thermal environment, including packaging and thermal management components, complicates this task. The proposed solution involves the use of on-chip sensors integrated into both dedicated test structures and actual circuits, enabling real-time, package-independent, and electrical measurements for thermal characterisation of device operation.
The trapping-induced effects risk unpredictable performance degradation, especially in GaN HEMT switch devices, where drift conditions are not yet fully characterised. The second part of this thesis aims to develop a method for determining the impact of trapping on the recovery time of GaN HEMT switches used in front-
end applications. This method quantifies the effects of recovery, allowing for comparing different devices and technologies.
Trapping
Thermal
HEMT
Transient
Dynamic effects
GaN MMIC
Författare
Andreas Divinyi
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Center for III Nitride semiconductor technology (C3NiT) fas2
VINNOVA (2022-03139), 2022-11-21 -- 2027-12-31.
Infrastruktur
Kollberglaboratoriet
Ämneskategorier
Annan elektroteknik och elektronik
Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: 467
Utgivare
Chalmers