Analysis and Design of RF-Input Doherty-Like Circulator Load Modulated Amplifier
Paper i proceeding, 2024
design methodology for the RF-input CLMA prototype is provided. To demonstrate the concept’s viability, a prototype CLMA employing GaN HEMT transistors and a commercially available surface mount (SMT) circulator is constructed. Experimental results exhibit a peak and back-off output power
drain efficiency of 57% and 53%, respectively, with an output power of 42.3 dBm at 3.4 GHz. When tested with a 20-MHz orthogonal frequency division multiplexing (OFDM) signal, characterized by a peak-to-average power ratio (PAPR) of 7 dB, the prototype circuit exhibits an average efficiency of 51%, with an adjacent channel leakage ratio (ACLR) better than -51.6 dBc after applying digital pre-distortion (DPD). To the best of our knowledge, this is the first RF-input Doherty-like CLMA with a SMT circulator.
gallium nitride (GaN)
power amplifier (PA)
energy efficiency
Circulator
load modulation
non-reciprocal
wideband
Doherty operation
Författare
Han Zhou
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Haojie Chang
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Christian Fager
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
2024 54th European Microwave Conference, EuMC 2024
27-30
9782874870774 (ISBN)
Paris, France,
Styrkeområden
Informations- och kommunikationsteknik
Nanovetenskap och nanoteknik
Infrastruktur
Kollberglaboratoriet
Drivkrafter
Hållbar utveckling
Innovation och entreprenörskap
Ämneskategorier
Telekommunikation
Signalbehandling
Annan elektroteknik och elektronik
Lärande och undervisning
Pedagogiskt arbete
DOI
10.23919/EuMC61614.2024.10732385