Analysis and Design of RF-Input Doherty-Like Circulator Load Modulated Amplifier
Paper in proceeding, 2024
design methodology for the RF-input CLMA prototype is provided. To demonstrate the concept’s viability, a prototype CLMA employing GaN HEMT transistors and a commercially available surface mount (SMT) circulator is constructed. Experimental results exhibit a peak and back-off output power
drain efficiency of 57% and 53%, respectively, with an output power of 42.3 dBm at 3.4 GHz. When tested with a 20-MHz orthogonal frequency division multiplexing (OFDM) signal, characterized by a peak-to-average power ratio (PAPR) of 7 dB, the prototype circuit exhibits an average efficiency of 51%, with an adjacent channel leakage ratio (ACLR) better than -51.6 dBc after applying digital pre-distortion (DPD). To the best of our knowledge, this is the first RF-input Doherty-like CLMA with a SMT circulator.
gallium nitride (GaN)
power amplifier (PA)
energy efficiency
Circulator
load modulation
non-reciprocal
wideband
Doherty operation
Author
Han Zhou
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Haojie Chang
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Christian Fager
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
2024 54th European Microwave Conference, EuMC 2024
27-30
9782874870774 (ISBN)
Paris, France,
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DOI
10.23919/EuMC61614.2024.10732385