Analysis and Design of RF-Input Doherty-Like Circulator Load Modulated Amplifier
Paper in proceeding, 2024

This paper introduces the design and analysis of an RF-input circulator load-modulated amplifier (CLMA), with Doherty-like operation and efficiency enhancement. The performance of the proposed architecture has been analyzed thoroughly for varying levels of isolation and loss. A detailed
design methodology for the RF-input CLMA prototype is provided. To demonstrate the concept’s viability, a prototype CLMA employing GaN HEMT transistors and a commercially available surface mount (SMT) circulator is constructed. Experimental results exhibit a peak and back-off output power
drain efficiency of 57% and 53%, respectively, with an output power of 42.3 dBm at 3.4 GHz. When tested with a 20-MHz orthogonal frequency division multiplexing (OFDM) signal, characterized by a peak-to-average power ratio (PAPR) of 7 dB, the prototype circuit exhibits an average efficiency of 51%, with an adjacent channel leakage ratio (ACLR) better than -51.6 dBc after applying digital pre-distortion (DPD). To the best of our knowledge, this is the first RF-input Doherty-like CLMA with a SMT circulator.

gallium nitride (GaN)

power amplifier (PA)

energy efficiency

Circulator

load modulation

non-reciprocal

wideband

Doherty operation

Author

Han Zhou

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Haojie Chang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

2024 54th European Microwave Conference, EuMC 2024

27-30
9782874870774 (ISBN)

54th European Microwave Conference, EuMC 2024
Paris, France,

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DOI

10.23919/EuMC61614.2024.10732385

More information

Latest update

12/11/2024