Microfabricated Waveguide Terminations for Wideband and Low-power THz Applications
Artikel i vetenskaplig tidskrift, 2024

This paper presents the design, simulation, microfabrication, and characterization of broadband waveguide terminations intended as drop-in components in waveguide blocks. Two types of terminations were developed, fabricated and characterized. The first type employs a quartz-based E-probe to couple to a waveguide, integrating an on-substrate titanium nitride (Ti-N) alloy resistive absorber with broadband tuning circuitry. This design achieves a return loss of better than 20 dB over the 260-375 GHz frequency range. The second type features a finline to slotline transition, constructed from a 30 μm thick Si membrane covered with high resistivity Ti-N alloy. This load demonstrates a return loss of better than 20 dB across the 210-380 GHz band. In order to ensure the required performance of the loads at cryogenic temperatures, the sheet resistance of the employed Ti-N resistive film was characterized from room temperature to 4K employing a closed-cycle cryostat and a 4-probe measurement system. For comparative purposes, the room temperature performance of terminations employing a traditional EccosorbTM material was measured and compared with the proposed waveguide terminations. Furthermore, the sideband rejection ratio SBRR of a 2SB SIS mixer was evaluated at cryogenic temperatures using the proposed finline-based terminations for LO directional couplers and 90° RF hybrids in comparison with the EccosorbTM made terminations. The measurements showed that the performance of the proposed terminations outperforms those achieved with Eccosorb™ absorbers at room temperature and is comparable at cryogenic temperatures.

noise temperature

finline

waveguides

Microfabrication

E-probe

load

2SB SIS mixer

Eccosorb TM

Terahertz

Författare

Cristian Daniel López

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium

Karl Birkir Flosason

Student vid Chalmers

Denis Meledin

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium

Leif Helldner

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium

Sven-Erik Ferm

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium

Victor Belitsky

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium

Vincent Desmaris

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium

IEEE Transactions on Terahertz Science and Technology

2156-342X (ISSN) 21563446 (eISSN)

Vol. In Press

Ämneskategorier (SSIF 2025)

Annan elektroteknik och elektronik

DOI

10.1109/TTHZ.2024.3510658

Mer information

Senast uppdaterat

2025-03-28